Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for random access memory (RRAM) devices. Controlling oxygen vacancies is required since RRAM uses (RS) characteristics redistributing ions in oxide, and poor defect control has been shown to significantly reduce reliability. Therefore, this designed F based device using anions rather than the main agent of RS behavior. We developed F:TiO2 material novel situ doping method ALD investigated its behaviors. The Pt/F:TiO2/Pt exhibited forming-less bipolar self-rectifying behavior anion migration, effectively reducing sneak current crossbar array architecture RRAM. doped passivated reduced related defects TiO2, confirmed x-ray photoelectron spectroscopy analysis. Adopting F-based provides viable candidate high reliability